Interdiffusion between GaAs and AlAs
- 1 August 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (3) , 138-141
- https://doi.org/10.1063/1.89026
Abstract
Epitaxial structures composed of thin layers of GaAs and AlAs were grown by the technique of molecular beam epitaxy. The interdiffusion coefficient was measured by Auger‐electron profiling after annealing the structures under As‐rich conditions over the temperature range 850–1100 °C. This coefficient was found to be extremely small, in the 10−18 cm2/sec region at the lower temperatures. It also depends on the alloy composition, decreasing with an increase in Al. Such dependence becomes stronger at higher temperatures, giving rise to activation energies of 4.3 and 3.6 eV in the limits of GaAs and AlAs, respectively.Keywords
This publication has 10 references indexed in Scilit:
- Smooth and coherent layers of GaAs and AlAs grown by molecular beam epitaxyApplied Physics Letters, 1976
- Properties of vacancy defects in GaAs single crystalsJournal of Applied Physics, 1975
- Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type SemiconductorsJournal of the Electrochemical Society, 1975
- Applications of depth profiling by Auger/sputter techniquesJournal of Vacuum Science and Technology, 1975
- Ga1−x Alx As superlattices profiled by Auger electron spectroscopyApplied Physics Letters, 1974
- The Growth of a GaAs–GaAlAs SuperlatticeJournal of Vacuum Science and Technology, 1973
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967
- Dependence of the Diffusion Coefficient on the Fermi Level: Zinc in Gallium ArsenidePhysical Review B, 1967
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964
- Diffusion in Compound SemiconductorsPhysical Review B, 1961