Te and Ge — doping studies in Ga1−xAlxAs
- 1 February 1975
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 4 (1) , 101-118
- https://doi.org/10.1007/bf02657839
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Properties of Ge-doped GaAs and Alx Ga1−xAs, Sn-doped Alx Ga1−xAs and Si-Te-doped GaAsJournal of Electronic Materials, 1974
- Phase equilibria in the system Al–Ga–As–Sn and electrical properties of Sn-doped liquid phase epitaxial AlxGa1−xAsJournal of Applied Physics, 1973
- The growth and properties of LPE GaAsSolid-State Electronics, 1972
- Electroreflectance Spectra of AlxGa1−xAs AlloysCanadian Journal of Physics, 1971
- Distribution Coefficient of Germanium in Gallium Arsenide Crystals Grown from Gallium SolutionsJournal of Applied Physics, 1971
- Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAsJournal of Physics and Chemistry of Solids, 1971
- Germanium-Doped Gallium ArsenideJournal of Applied Physics, 1970
- Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy GapsJournal of Applied Physics, 1969
- Effect of Te and S Donor Levels on the Properties ofnear the Direct-Indirect TransitionPhysical Review B, 1968
- EFFECT OF DONOR IMPURITIES ON THE DIRECT-INDIRECT TRANSITION IN Ga(As1 - xPx)Applied Physics Letters, 1966