Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAs
- 1 January 1971
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 32 (3) , 571-580
- https://doi.org/10.1016/0022-3697(71)90006-0
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Ga–As–Si: Phase Studies and Electrical Properties of Solution-Grown Si-Doped GaAsJournal of Applied Physics, 1970
- Germanium-Doped Gallium ArsenideJournal of Applied Physics, 1970
- The 1040°C solid solubility isotherm of zinc in GaP: The fermi level as a function of hole concentrationJournal of Physics and Chemistry of Solids, 1968
- The solid solubility limits of zinc in GaAs at 1000Journal of Physics and Chemistry of Solids, 1967
- Detection of Selenium Clustering in GaAs by Transmission Electron MicroscopyJournal of Applied Physics, 1967
- EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°KApplied Physics Letters, 1966
- The gallium-arsenic-tin and gallium-arsenic-germanium ternary systemsJournal of the Less Common Metals, 1966
- Solubility and Electrical Behavior of Zinc, Sulfur, Selenium, and Tellurium in Gallium PhosphideJournal of the Electrochemical Society, 1965
- Solubility and Electrical Behavior of Group IV Impurities in Solution Grown Gallium PhosphideJournal of the Electrochemical Society, 1965
- Behavior of selenium in gallium arsenideJournal of Physics and Chemistry of Solids, 1963