Detection of Selenium Clustering in GaAs by Transmission Electron Microscopy
- 1 February 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (2) , 760-764
- https://doi.org/10.1063/1.1709408
Abstract
Direct evidence has been found for the existence of coherent particles and small precipitates in bulk Se‐doped GaAs (n=2×1018 cm−3) and in Se‐doped, vapor‐grown epitaxial GaAs (n=4×1018; 1×1019 cm−3). Data obtained from moiré fringe contrast indicate a probable particle composition of Ga2Se3. In samples with more than 2×1018 carriers cm−3, the major part of the total Se content is in the form of particles, and this accounts for the difference between the total Se concentration and the electrically active Se concentration. Diffusion in the solid can account for particle growth in the Bridgman‐grown crystal, but not in the vapor‐grown epitaxial material.This publication has 7 references indexed in Scilit:
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