Ga–As–Si: Phase Studies and Electrical Properties of Solution-Grown Si-Doped GaAs
- 1 June 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (7) , 3195-3196
- https://doi.org/10.1063/1.1659398
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Silicon-Doped Gallium Arsenide Grown from Gallium Solution: Silicon Site DistributionJournal of Applied Physics, 1969
- Electrical and Optical Properties of n-Type Si-Compensated GaAs Prepared by Liquid-Phase EpitaxyJournal of Applied Physics, 1969
- Local-Mode Absorption and Defects in Compensated Silicon-Doped Gallium ArsenideJournal of Applied Physics, 1968
- SITE TRANSFER OF Si IN GaAsApplied Physics Letters, 1968
- EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°KApplied Physics Letters, 1966
- The Ga-As-Si Ternary Phase SystemJournal of the Electrochemical Society, 1966
- Studies on Group III-V Intermetallic CompoundsPhysical Review B, 1957