Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
- 1 October 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (10A) , L609
- https://doi.org/10.1143/jjap.22.l609
Abstract
Electron mobility of quasi-two dimensional electron gas (2DEG) in selectively doped GaAs/N-Al x Ga1-x As (x=0.3) heterostructures grown by MBE was investigated as a function of thickness of an undoped Al x Ga1-x As spacer-layer (0–200 Å) introduced between a Si-doped AlGaAs layer and an undoped GaAs layer, at 77 K and 5 K. Mobility of 2DEG as high as 2,120,000 cm2/Vs at 5 K was achieved with a spacer-layer thickness of 200 Å. This electron mobility is higher than any observed so far in semiconductor materials.Keywords
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