High mobility electrons in selectively doped GaAs/n-AlGaAs heterostructures grown by MBE and their application to high-speed devices
- 2 January 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 56 (2) , 455-463
- https://doi.org/10.1016/0022-0248(82)90465-1
Abstract
No abstract availableKeywords
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