A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
- 1 May 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (5) , L225
- https://doi.org/10.1143/jjap.19.l225
Abstract
Studies of field-effect control of the high mobility electrons in MBE-grown selectively doped GaAs/n-Al x Ga1-x As heterojunctions are described. Successful fabrication of a new field-effect transistor, called a high electron mobility transistor (HEMT), with extremely high-speed microwave capabilities is reported.Keywords
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