Electron energy levels in GaAs-heterojunctions
- 15 July 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 30 (2) , 840-848
- https://doi.org/10.1103/physrevb.30.840
Abstract
Calculated results for energy levels of electrons in GaAs- As heterojunctions are presented and their sensitivity to various parameters—including acceptor doping level in the GaAs, heterojunction barrier height, effective-mass and dielectric-constant discontinuities, interface grading, and ambient temperature—is examined.
Keywords
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