Subbands in back-gated heterojunctions
- 1 July 1984
- journal article
- Published by Elsevier in Surface Science
- Vol. 142 (1-3) , 452-455
- https://doi.org/10.1016/0039-6028(84)90350-9
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Interband scattering in mobility in GaAs-GaAlAs heterostructuresSurface Science, 1984
- Subbands in back-gated heterojunctionsSolid State Communications, 1983
- Carrier confinement effectsSurface Science, 1983
- Heterojunction-induced phenomena in Hall effect and photoconductivity measurements of epitaxial AlxGa1−xAsJournal of Applied Physics, 1983
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature MobilityJournal of the Physics Society Japan, 1982
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunction. I. Subband Structure and Light-Scattering SpectraJournal of the Physics Society Japan, 1982
- Electrical Properties of Si-Doped AlxGa1-xAs Layers Grown by MBEJapanese Journal of Applied Physics, 1982
- Donor energy level for Se in Ga1−xAlxAsApplied Physics Letters, 1982
- Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potentialElectronics Letters, 1982
- Negative differential resistance through real-space electron transferApplied Physics Letters, 1979