Carrier confinement effects
- 2 September 1983
- journal article
- Published by Elsevier in Surface Science
- Vol. 132 (1-3) , 577-593
- https://doi.org/10.1016/0039-6028(83)90562-9
Abstract
No abstract availableThis publication has 45 references indexed in Scilit:
- Effective-mass theory for electrons in heterostructuresJournal of Vacuum Science and Technology, 1982
- On the interface connection rules for effective-mass wave functions at an abrupt heterojunction between two semiconductors with different effective massJournal of Vacuum Science and Technology, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Effective-mass theory of semiconductor heterojunctions and superlatticesSurface Science, 1982
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Electronic Properties of Flat-Band Semiconductor HeterostructuresPhysical Review Letters, 1981
- Theory of Valley Splitting in anN-Channel (100) Inversion Layer of Si I. Formulation by Extended Zone Effective Mass TheoryJournal of the Physics Society Japan, 1977
- A new semiconductor superlatticeApplied Physics Letters, 1977
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Tunneling from an Independent-Particle Point of ViewPhysical Review B, 1961