Self-Consistent Results for a GaAs/Al_xGa_1-xAs Heterojunciton. II. Low Temperature Mobility

This publication has 27 references indexed in Scilit:

• Transport properties of GaAs-AlxGa1−x As heterojunction field-effect transistors
  Applied Physics Letters, 1981
• Experimental and theoretical electron mobility of modulation doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy
  Journal of Applied Physics, 1981
• Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
  Japanese Journal of Applied Physics, 1981
• Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures
  Journal of Applied Physics, 1981
• High mobility GaAs-Al _x Ga _{1− x} As single period modulation-doped heterojunctions
  Electronics Letters, 1981
• High mobilities in AlxGa1−xAs-GaAs heterojuntions
  Applied Physics Letters, 1980
• High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interface
  Applied Physics Letters, 1980
• Growth conditions to achieve mobility enhancement in Al _x Ga _1−x As-GaAs heterojunctions by m.b.e.
  Electronics Letters, 1980
• Two-dimensional electron gas at a semiconductor-semiconductor interface
  Solid State Communications, 1979
• Electron mobilities in modulation-doped semiconductor heterojunction superlattices
  Applied Physics Letters, 1978