Transport properties of GaAs-AlxGa1−x As heterojunction field-effect transistors
- 1 November 1981
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (9) , 712-714
- https://doi.org/10.1063/1.92858
Abstract
We report low field transport properties of n‐channel GaAs‐AlxGa1−x As heterojunction field‐effect transistors. Studies of the Shubnikov‐de Haas effect confirm that the devices are insulated‐gate field‐effect transistors, with AlxGa1−x As as the gate insulator. The channel mobility increases with density following μ2∼ nγ, with γ varying from 0.45 to 1.4. μ = 1.2×105 cm2/V sec at 78 K and 3.6×105 cm2/V sec at 4.2 K are observed at n∼4×1011/cm2.Keywords
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