Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlattices
- 1 May 1981
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (9) , 691-693
- https://doi.org/10.1063/1.92481
Abstract
The introduction of an undoped (AlGa)As spacer enhances significantly the low‐temperature mobility in modulation‐doped GaAs‐(AlGa)As superlattices. Mobilities increase monotonically with spacer thickness. This indicates that ionized impurity scattering can be further suppressed by increasing the separation between carriers and their parent donors. Hall mobilities of 93 000 cm2/V sec were observed for average Hall densities of 4.9×1016 cm−3 at 4.2 K.Keywords
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