Electronic properties of a heavily-doped n-type GaAsGa1−xAlxAs superlattice
- 31 August 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 98 (1-3) , 101-107
- https://doi.org/10.1016/0039-6028(80)90479-3
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperaturesPhysical Review B, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Screening Effect and Quantum Transport in a Silicon Inversion Layer in Strong Magnetic FieldsJournal of the Physics Society Japan, 1977
- Shubnikov—de Haas Oscillations in a Semiconductor SuperlatticePhysical Review Letters, 1977
- Resonant Raman Scattering in a Semiconductor SuperlatticePhysical Review Letters, 1976
- Density-functional calculation of sub-band structure in accumulation and inversion layersPhysical Review B, 1976
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- Effect of Thin Oxide Film on Breakdown Voltage of SiliconN+PJunctionJapanese Journal of Applied Physics, 1974
- Properties of Electrons in Semiconductor Inversion Layers with Many Occupied Electric Subbands. I. Screening and Impurity ScatteringPhysical Review B, 1970