Electrical Properties of Si-Doped AlxGa1-xAs Layers Grown by MBE
- 1 November 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (11A) , L675
- https://doi.org/10.1143/jjap.21.l675
Abstract
Electrical properties of Si-doped Al x Ga1-x As layers grown by MBE were investigated as a function of AlAs mole fraction (0≦x≦0.5). Although ionization energy of Si donor remained constant at a few meV in the range of 0≦x≦0.25, it rapidly became larger with increasing x for x≧0.25. It was found to be 60 meV for x=0.3, which is the composition used in HEMT. The overall trend was similar to the case of Sn- or Te-doped Al x Ga1-x As layers. However, the ionization energy was found to be independent of doping concentration, unlike the case of Sn-doped Al x Ga1-x As layers grown by MBE.Keywords
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