Conduction-band discontinuity in InGaP/GaAs measured using both current-voltage and photoemission methods
- 27 January 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (4) , 474-476
- https://doi.org/10.1063/1.106639
Abstract
Both current-voltage and photoemission measurements of the conduction-band discontinuity of the same InGaP/GaAs p-n heterojunction have been carried out. Interpretation of the current-voltage results using thermionic emission theory applied to a heterojunction bipolar transistor have resulted in a conduction-band offset value of 0.21 eV in the case of a compositionally abrupt junction. This figure has been confirmed by performing independent photoemission measurements on the same junction.Keywords
This publication has 9 references indexed in Scilit:
- Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5PSemiconductor Science and Technology, 1991
- Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressureApplied Physics Letters, 1991
- Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodesApplied Physics Letters, 1991
- Conduction- and valence-band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor depositionApplied Physics Letters, 1990
- Band lineup for a GaInP/GaAs heterojunction measured by a high-gain N p n heterojunction bipolar transistor grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1989
- Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling techniqueApplied Physics Letters, 1987
- Band discontinuities in GaAs/AlxGa1−xAs heterojunction photodiodesApplied Physics Letters, 1987
- Determination of valence and conduction-band discontinuities at the (Ga,In) P/GaAs heterojunction by C-V profilingJournal of Applied Physics, 1987
- Open-tube diffusion techniques for InP/LnGaAs heterojunctior bipolar transistorsJournal of Electronic Materials, 1986