Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodes
- 11 February 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (6) , 616-618
- https://doi.org/10.1063/1.104574
Abstract
Internal photoemission has been observed in GaAs‐Ga0.52In0.48P p‐I‐N heterojunction photodiodes grown by gas source molecular beam epitaxy. Threshold energies associated with this photocurrent mechanism have been accurately measured. Simple analysis provides a precise determination of the energy‐band discontinuities in this heterostructure material system. The results indicate a conduction‐band discontinuity of ΔEc=108±6 meV at room temperature.Keywords
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