Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5P

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Abstract
High-quality GaAs/Ga0.5In0.5P heterostructures have been grown by metal-organic molecular beam epitaxy, using both triethylgallium and trimethylindium as group III element sources and arsine and phosphine as group V element sources. Both hydride and hydrogen flow rates have been found to have a significant effect on the growth rate of the layers. GaAs bulk layers show p-type conductivity with carbon as a residual impurity. Minimum carbon incorporation is found at around 500 degrees C. The purity of the epilayers is also sensitive to the purity of the organometallic starting material. Ga0.5In0.5P bulk layers show optimum structural properties at a growth temperature of 520 degrees C. Full width at half maximum of GaInP (400) reflection peaks as low as 15" have been found. GaAs/Ga0.5In0.5P multiquantum well structures with wells as thin as 10 AA and confinement energy exceeding 300 meV have also been grown.