Selectively Doped GaAs/N-Al0.3Ga0.7As Heterostructures Grown by Gas-Source MBE
- 1 May 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (5A) , L896
- https://doi.org/10.1143/jjap.27.l896
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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