Surface morphology of GaAs grown by gas-source MBE using trimethylgallium and arsenic
- 17 August 1986
- journal article
- research article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 76 (2) , 521-524
- https://doi.org/10.1016/0022-0248(86)90404-5
Abstract
No abstract availableKeywords
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