Structure Analysis of Oval Defect on Molecular Beam Epitaxial GaAs Layer by Cross-Sectional Transmission Electron Microscopy Observation
- 1 November 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (11A) , L846-848
- https://doi.org/10.1143/jjap.23.l846
Abstract
The fine structure of a surface defect on GaAs grown by molecular beam epitaxy (MBE) is analyzed by transmission electron microscopy (TEM) observing cross-sectional views of the specimen. The defect has a pyramid structure consisting of four {111} stacking fault planes whose Burgers vectors are a 0/6 , a 0/6 , a 0/6 and a 0/6 <\overline112>. Because a defect of this type always starts at the GaAs substrate surface, the origin is thought to be a point defect or atomic contamination on the surface.Keywords
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