Cross-sectional specimens for transmission electron microscopy
- 1 August 1974
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (8) , 3315-3316
- https://doi.org/10.1063/1.1663778
Abstract
Cross‐sectional views of epitaxial structures yield much information when examined by transmission electron microscopy. Since the growth direction then lies in the plane of observation, rather than normal to it (as is usual), the overgrowth, original growth interface, and substrate can be imaged either simultaneously or individually. A realization of the suitable technique for preparing thin cross‐sectional samples is described. Applications to continuously graded GaAsxP1−x/GaAs and step‐graded InxGa1−xP/GaP are shown.This publication has 3 references indexed in Scilit:
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969
- Improvements to the ALBA Machine for Thinning Specimens for Electron MicroscopyReview of Scientific Instruments, 1968
- The Chemical Polishing of Gallium Arsenide in Bromine-MethanolJournal of the Electrochemical Society, 1963