Dislocation morphology in graded heterojunctions: GaAs1?xPx
- 1 March 1969
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 4 (3) , 223-235
- https://doi.org/10.1007/bf00549922
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Improvements to the ALBA Machine for Thinning Specimens for Electron MicroscopyReview of Scientific Instruments, 1968
- Accommodation of Lattice Mismatch at HeterojunctionsJournal of the Electrochemical Society, 1968
- On the Theory of Interfacial Energy and Elastic Strain of Epitaxial Overgrowths in Parallel Alignment on Single Crystal SubstratesPhysica Status Solidi (b), 1967
- Dislocations and Precipitates in GaAs Injection LasersJournal of Applied Physics, 1966
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- Crystal Interfaces. Part I. Semi-Infinite CrystalsJournal of Applied Physics, 1963
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962
- The Status of Transistor Research in Compound SemiconductorsProceedings of the IRE, 1958
- One-dimensional dislocations. II. Misfitting monolayers and oriented overgrowthProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949