Experiments on Ge-GaAs heterojunctions
- 1 September 1962
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 5 (5) , 341-351
- https://doi.org/10.1016/0038-1101(62)90115-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Germanium-Gallium Arsenide Heterojunctions [Letter to the Editor]IBM Journal of Research and Development, 1960
- Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle ProcessIBM Journal of Research and Development, 1960
- Vapor-Deposited Single-Crystal GermaniumJournal of Applied Physics, 1960
- Optical Absorption by Degenerate GermaniumPhysical Review Letters, 1960
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959