Monolithic integration using differential Si-MBE
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 458-462
- https://doi.org/10.1016/0022-0248(87)90433-7
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- High Speed Integrated Circuit Using Silicon Molecular Beam Epitaxy (Si‐MBE)Journal of the Electrochemical Society, 1985
- Silicon Layers Grown by Differential Molecular Beam EpitaxyJournal of the Electrochemical Society, 1985
- Silicon molecular beam epitaxyThin Solid Films, 1983
- Patterned silicon molecular beam epitaxy with submicron lateral resolutionApplied Physics Letters, 1982
- GaAs planar technology by molecular beam epitaxy (MBE)Journal of Applied Physics, 1975