All solid source molecular beam epitaxy growth of1.35 µm wavelengthstrained-layer GaInAsP quantum well laser
- 11 May 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (10) , 797-799
- https://doi.org/10.1049/el:19950526
Abstract
The first GaInAsP based laser diode grown by all solid source molecular beam epitaxy is reported. A strained-layer GaInAsP/InP separate confinement heterostructure multiquantum well laser emitting at 1.35 µm was prepared. A low threshold current density of 510 A/cm2 was obtained for a broad-area laser having a cavity length of 1300 µm.Keywords
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