Evidence of SiO at the Si-oxide interface by surface soft X-ray absorption near edge spectroscopy
- 1 September 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 99 (1) , 76-86
- https://doi.org/10.1016/0039-6028(80)90578-6
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Chemical bond and related properties of SiO2 III. Core-level shifts in SiOxPhysica Status Solidi (a), 1977
- Effect of heat treatment on chemical and electronic structure of solid SiO : An electron spectroscopy studySolid State Communications, 1977
- Chemical bond and related properties of SiO2 I. character of the chemical bondPhysica Status Solidi (a), 1977
- Abstract: Electrical and structural characteristics of the nitrogen reaction at SiO2–Si interfacesJournal of Vacuum Science and Technology, 1977
- Photoemission studies of the surface states and oxidation of group IV semiconductorsJournal of Vacuum Science and Technology, 1977
- Auger depth profiling of interfaces in MOS and MNOS structuresJournal of Vacuum Science and Technology, 1976
- An Auger analysis of the SiO2-Si interfaceJournal of Applied Physics, 1976
- Phase separation in silicon oxides as seen by Auger electron spectroscopyApplied Physics Letters, 1975
- An analysis of the radial distribution function of SIOxJournal of Non-Crystalline Solids, 1975
- Optical properties of non-crystalline Si, SiO, SiOx and SiO2Journal of Physics and Chemistry of Solids, 1971