Room-temperature resonant tunnelling bipolar transistor XNOR and XOR integrated circuits
- 30 September 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (20) , 1802-1803
- https://doi.org/10.1049/el:19931199
Abstract
The first resonant tunnelling bipolar transistor integrated circuits operating at room temperature are demonstrated. The circuits are composed of cointegrated resonant tunnelling bipolar transistors and double heterojunction bipolar transistors based on InP substrates. Both a three-transistor XNOR and a seven-transistor XOR logic gate have been demonstrated using a 3 V power supply.Keywords
This publication has 2 references indexed in Scilit:
- Hybrid RBT with resonant-tunneling-diode and hetero-bipolar-transistor on InP substratePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- The Use of Tertiarybutylphosphine and Tertiarybutylarsine for the Metalorganic Molecular Beam Epitaxial Growth of Resonant Tunneung DevicesMRS Proceedings, 1991