The Use of Tertiarybutylphosphine and Tertiarybutylarsine for the Metalorganic Molecular Beam Epitaxial Growth of Resonant Tunneung Devices

This publication has 12 references indexed in Scilit:

• Organometallic vapor phase epitaxy of AlGaAs/GaAs heterojunction bipolar transistors using tertiarybutylarsine
  Applied Physics Letters, 1991
• Effects of lattice mismatch on InxGa1−xAs/InP heterojunctions
  Applied Physics Letters, 1990
• Nanoelectronics
  Nanotechnology, 1990
• Characterization of InP grown by OMVPE using trimethylindium and tertiarybutylphosphine (TBP) at low V/III ratios and reduced TBP partial pressures
  Journal of Electronic Materials, 1989
• Microwave multiple-state resonant tunneling bipolar transistors
  IEEE Electron Device Letters, 1989
• Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperature
  Applied Physics Letters, 1988
• Multiple negative transconductance and differential conductance in a bipolar transistor by sequential quenching of resonant tunneling
  Applied Physics Letters, 1988
• Dependence of the conduction in In0.53Ga0.47As-InP double-barrier tunneling structures on the mesa-etching process
  Applied Physics Letters, 1987
• Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs
  Applied Physics Letters, 1987
• Negative differential resistance at room temperature from resonant tunnelling in GaInAs/InP double-barrier heterostructures
  Electronics Letters, 1987