Characterization of InP grown by OMVPE using trimethylindium and tertiarybutylphosphine (TBP) at low V/III ratios and reduced TBP partial pressures
- 1 May 1989
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (3) , 355-360
- https://doi.org/10.1007/bf02657983
Abstract
No abstract availableKeywords
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