Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperature

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Abstract
Pseudomorphic In0.53 Ga0.47 As/AlAs/InAs resonant tunneling diodes have been grown on InP substrates by molecular beam epitaxy. Peak‐to‐valley current ratios as high as 30 at 300 K and 63 at 77 K are obtained on a structure with barriers of ten atomic layers AlAs, and a well consisting of three atomic layers of In0.53 Ga0.47 As, six atomic layers of InAs, and three atomic layers of In0.53 Ga0.47 As. For comparison pseudomorphic In0.53 Ga0.47 As/AlAs with In0.53 Ga0.47 As well structures have also been fabricated. For the In0.53 Ga0.47 As well structures, peak‐to‐valley current ratios as high as 23 have been obtained at 300 K, and, in other devices with lower current densities, two resonances are observed at room temperature.