Organometallic vapor phase epitaxy of AlGaAs/GaAs heterojunction bipolar transistors using tertiarybutylarsine
- 6 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (18) , 1997-1999
- https://doi.org/10.1063/1.105044
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
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- GaAs p-i-n photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsineApplied Physics Letters, 1989
- Decomposition mechanisms of tertiarybutylarsineJournal of Crystal Growth, 1989
- Tertiary butylarsine grown GaAs solar cellApplied Physics Letters, 1989