Controlled doping of GaAs films grown with tertiarybutylarsine
- 15 May 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (10) , 6507-6512
- https://doi.org/10.1063/1.345126
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Effects of methylarsine homologs (CH3)nAsH3−n on the metalorganic vapor-phase epitaxy of GaAsJournal of Applied Physics, 1989
- Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsineApplied Physics Letters, 1989
- Magnetophotoluminescence characterization of residual donors in GaAs grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1988
- 13C isotopic labeling studies of growth mechanisms in the metalorganic vapor phase epitaxy of GaAsJournal of Crystal Growth, 1988
- Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenicApplied Physics Letters, 1987
- Growth of high-quality GaAs using trimethylgallium and diethylarsineApplied Physics Letters, 1987
- Alternatives to arsine: The atmospheric pressure organometallic chemical vapor deposition growth of GaAs using triethylarsenicApplied Physics Letters, 1987
- Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAsApplied Physics Letters, 1987
- Use of tertiarybutylarsine for GaAs growthApplied Physics Letters, 1987
- The role of impurities in III/V semiconductors grown by organometallic vapor phase epitaxyJournal of Crystal Growth, 1986