Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenic
- 11 May 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (19) , 1386-1387
- https://doi.org/10.1063/1.97865
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- OMCVD growth of GaAs and AlGaAs using a solid as sourceJournal of Electronic Materials, 1985
- Metal organics vapour phase epitaxy of GaAs : Raman studies of complexes formationRevue de Physique Appliquée, 1985
- Mechanism of carbon incorporation in MOCVD GaAsJournal of Crystal Growth, 1984
- Improved mobility in OM-VPE-grown Ga
1−
x
In
x
AsElectronics Letters, 1981
- Electron Mobility in High-Purity GaAsJournal of Applied Physics, 1970