Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasers
- 13 August 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (7) , 695-697
- https://doi.org/10.1063/1.103595
Abstract
Tertiarybutylarsine was used in the growth of GaAs and AlGaAs by metalorganic chemical vapor deposition over a range of compositions and V/III ratios. GaAs layers were obtained with both n‐ and p‐type background carrier concentrations in the low 1014 cm−3 range. AlGaAs was grown at 20, 30, and 50% compositions, and photoluminescence of the Al0.2Ga0.8As indicates high quality material with full width half maximum (FWHM) values of the peaks being comparable to arsine‐grown AlGaAs. High quality multiple Al0.3Ga0.7As/GaAs quantum wells of various widths produced photoluminescence spectra with FWHM values comparable to arsine‐grown samples. Minority‐carrier lifetimes as long as 400 ns were measured for a heterostructure of 0.5 μm GaAs with Al0.3Ga0.7As barrier layers. Graded index separate confinement heterostructure lasers were fabricated, and broad‐ area test results of these devices produced threshold current densities as low as 186 A/cm2.Keywords
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