Metastable defects in GaAs grown by metalorganic chemical vapor deposition: Dependence on the V/III ratio
- 15 May 1989
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (10) , 4076-4078
- https://doi.org/10.1063/1.343338
Abstract
Metastable defects in GaAs samples grown by metalorganic chemical vapor deposition were analyzed as a function of arsine to trimethylgalium ratio, using deep-level transient spectroscopy and isochronal annealing. The data have shown that metastability is related to the presence of an electron level 0.33 eV below the conduction band which is independent on the As/Ga ratio. Arsenic interstitials could be responsible for this level.This publication has 10 references indexed in Scilit:
- New metastable defects in GaAsApplied Physics Letters, 1987
- Identification of a defect in a semiconductor:EL2 in GaAsPhysical Review B, 1986
- Deep states in GaAs LEC crystalsSolid-State Electronics, 1986
- Dependence of deep-level parameters in ion-implanted GaAs MESFET's on material preparationIEEE Transactions on Electron Devices, 1986
- Correlation of photoluminescence and deep trapping in metalorganic chemical vapor deposited AlxGa1−xAs (0≤x≤0.40)Journal of Applied Physics, 1984
- Effect of Metals Used for Schottky Barrier Contacts on DLTS Signals for LEC n-GaAs CrystalsJapanese Journal of Applied Physics, 1984
- Identification of oxygen-related midgap level in GaAsApplied Physics Letters, 1984
- On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopyJournal of Applied Physics, 1982
- Deep electron traps in organometallic vapor phase grown AlxGa1−xAsJournal of Applied Physics, 1980
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977