Integration of spin valves and GaAs diodes in magnetoresistive random access memory cells
- 15 April 1999
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (8) , 4779-4781
- https://doi.org/10.1063/1.370479
Abstract
A magnetoresistive random access memory, based on a dynamic random access memory-like floor plan, is demonstrated for an array of magnetic memorycells. Each memory cell consists of a giant magnetoresistive spin-valve structure in series with a GaAs diode. Any single bit in the matrix can be addressed using a coincident current scheme, both for write and read operations. The integration of a series diode in the memory cell yields, for this first demonstrator, read signals of approximately 10 mV.This publication has 8 references indexed in Scilit:
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