Design, simulation, and realization of solid state memory element using the weakly coupled GMR effect
- 1 March 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 32 (2) , 520-526
- https://doi.org/10.1109/20.486542
Abstract
We found that in a weakly coupled giant magnetoresistive (GMR) sandwich the small-field response's slope is dependent on its past magnetic history. Based on this storage mechanism, we designed a binary solid state memory element. Simulation results show that it operates on the general principle of storing a binary digit in the hard component and sensing nondestructively its remanent state by switching the soft component in such a way that the magnetic state of the hard component is unaltered, thereby causing a dramatic GMR polar readout. So far a 1-b experimental apparatus has been realized.Keywords
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