A unified approach to the base widening mechanisms in bipolar transistors
- 31 October 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (10) , 863-866
- https://doi.org/10.1016/0038-1101(75)90009-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- An accurate numerical steady-state one-dimensional solution of the P-N junctionSolid-State Electronics, 1968
- A theory of transistor cutoff frequency (fT) falloff at high current densitiesIRE Transactions on Electron Devices, 1962
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953