Minority carrier lifetime in GaP grown by liquid phase epitaxy for high temperature applications

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Abstract
We have measured the minority carrier lifetime τmin in liquid phase epitaxial GaP material grown for high‐temperature device applications, as a function of doping concentration, temperature, and epitaxial layer thickness. In p‐type GaP doped with Mg, τmin remains constant with increasing carrier concentration until p≊1018 cm−3, where it decreases rapidly. For nominally undoped n‐type material we find that τmin increases by nearly one order of magnitude over the temperature range T = 22–600 °C. The apparent lifetimes in these thin‐layer materials increase with layer thickness indicating that surface and interface recombination are important.

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