Strahlende Rekombination und optische Eigenschaften von GaP
- 1 January 1975
- journal article
- research article
- Published by Wiley in Fortschritte der Physik
- Vol. 23 (6) , 317-398
- https://doi.org/10.1002/prop.19750230602
Abstract
No abstract availableThis publication has 208 references indexed in Scilit:
- Efficient green electroluminescent junctions in GaPPublished by Elsevier ,2002
- Hemispherical GaP:N green electroluminescent diodesSolid-State Electronics, 1973
- The effects of preferential pairing and its detection using electron radiation damageProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1971
- Zeeman Effect and Crystal-Field Splitting of Excitons Bound to Isoelectronic Bismuth in Gallium PhosphidePhysical Review B, 1969
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Band Gap of Gallium Phosphide from 0 to 900°K and Light Emission from Diodes at High TemperaturesPhysical Review B, 1968
- Excitation Spectra and Quantum Efficiency of GaP Containing Zn and OPhysical Review B, 1968
- Radiative decay in compound semiconductorsSolid-State Electronics, 1967
- Optical Properties of Gallium Arsenide-PhosphidePhysical Review B, 1967
- Bound Excitons in GaPPhysical Review B, 1963