Hemispherical GaP:N green electroluminescent diodes
- 30 September 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (9) , 1037-1038
- https://doi.org/10.1016/0038-1101(73)90204-9
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Efficient green electroluminescent junctions in GaPPublished by Elsevier ,2002
- Prevention of diffusion-induced defects in the fabrication of diffused electroluminescent GaP devicesJournal of Electronic Materials, 1972
- Dicing Induced Damage in GaP Electroluminescent DiodesJournal of the Electrochemical Society, 1972
- Efficient Electroluminescence from Zinc-Diffused Ga1−xAlxAs Diodes at 25°CApplied Physics Letters, 1971
- Steady-State Junction-Current Distributions in Thin Resistive Films on Semiconductor Junctions (Solutions of ▿2v = ±ev)Journal of Applied Physics, 1970
- Green Electroluminescence from Gallium Phosphide Diodes near Room TemperatureJournal of Applied Physics, 1967
- Epitaxial hemispherical electroluminescent diodeSolid-State Electronics, 1967
- Improving the External Efficiency of Electroluminescent DiodesJournal of Applied Physics, 1965
- ONE-WATT GaAs p-n JUNCTION INFRARED SOURCEApplied Physics Letters, 1963
- Light emission from injecting contacts on germanium in the 2μ to 6μ bandPhysica, 1954