Improving the External Efficiency of Electroluminescent Diodes

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Abstract
To maximize the external radiant output from noncoherent electroluminescent diodes, it is necessary to reduce or eliminate total internal reflections and absorption. Total reflection can be eliminated by appropriate shaping of the diode. A reflecting, plane‐paraboloid structure is described, and an evaluation of its performance is given. It is shown that the high self‐absorption in Ga(As,P) alloys can be reduced by using material in which the As/P ratio varies across the thickness of the structure. The radiation emitted from a junction fabricated on the As‐rich surface will then be absorbed less because of the higher band gap of the rest of the structure. When these corrective measures have been applied, the output of noncoherent diodes approaches that of semiconductor lasers made from similar material.

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