Efficient Electroluminescence from Zinc-Diffused Ga1−xAlxAs Diodes at 25°C
- 15 August 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (4) , 98-100
- https://doi.org/10.1063/1.1653851
Abstract
Efficient Ga1−xAlxAs light‐emitting diodes with zinc‐diffused junctions have been fabricated. External quantum efficiencies as high as 14% for near‐infrared diodes (8150 Å) and 4% for visible red diodes (6950 Å) have been achieved at 25°C. The high efficiencies result from using a hemispherically shaped emitter with a composition profile which reduces internal bulk absorption.Keywords
This publication has 8 references indexed in Scilit:
- Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy GapsJournal of Applied Physics, 1969
- Injection Electroluminescence from Diffused Gallium-Aluminum Arsenide DiodesJournal of Applied Physics, 1969
- Properties of Efficient Silicon-Compensated AlxGa1−xAs Electroluminescent DiodesJournal of Applied Physics, 1969
- Ga-Al-As: Phase, thermodynamic and optical propertiesJournal of Physics and Chemistry of Solids, 1969
- EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1-xAlxAs p-n JUNCTIONS GROWN BY LIQUID-PHASE EPITAXYApplied Physics Letters, 1967
- Photometric figures of merit for semiconductor luminescent sources operating in spontaneous modeInfrared Physics, 1966
- Optical Generation Spectrum for the Electron Thermal-Injection Mechanism in GaAs DiodesJournal of Applied Physics, 1964
- Common Occurrence of Artifacts or ``Ghost'' Peaks in Semiconductor Injection Electroluminescence SpectraJournal of Applied Physics, 1964