Nature of optically induced defects in Ga1−xAlxAs–GaAs double-heterojunction laser structures
- 15 August 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (4) , 226-228
- https://doi.org/10.1063/1.1655450
Abstract
It is shown by transmission electron microscopy (TEM) investigation that the dark line defect (DLD) structure induced by optical pumping of undoped Ga1−xAlxAs–GaAs double‐heterostructure (DH) laser material is identical to the DLD's which develop during laser diode operation of devices fabricated from similar p‐n structure material. This confirms the DLD generation, and subsequent failure of cw laser diodes can be a growth‐related property of Ga1−xAlxAs–GaAs DH laser material and is not necessarily associated with p‐n junction dopants or contact metallization technology.Keywords
This publication has 4 references indexed in Scilit:
- Observation of dark-line degradation sites in AlGaAs/GaAs DH laser material by etching and phase-contrast microscopyJournal of Applied Physics, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973
- Degradation characteristics of cw optically pumped AlxGa1−xAs heterostructure lasersApplied Physics Letters, 1973
- Degradation of CW GaAs double-heterojunction lasers at 300 KProceedings of the IEEE, 1973