Defect structure introduced during operation of heterojunction GaAs lasers
- 15 October 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (8) , 469-471
- https://doi.org/10.1063/1.1654962
Abstract
The nature and origin of the defects responsible for the rapid degradation of stripe geometry GaAs–GaAlAs double‐heterostructure lasers have been identified by transmission electron microscopy. These defects are formed by a three‐dimensional dislocation network which originates at a dislocation crossing the GaAlAs and GaAs epilayers. The propagation of the dislocation network takes place by a climb mechanism induced by the operation of the device.Keywords
This publication has 5 references indexed in Scilit:
- cw degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gainJournal of Applied Physics, 1973
- cw degradation at 300°K of GaAs double-heterostructure junction lasers. I. Emission spectraJournal of Applied Physics, 1973
- Degradation characteristics of cw optically pumped AlxGa1−xAs heterostructure lasersApplied Physics Letters, 1973
- Strain-induced degradation of GaAs injection lasersApplied Physics Letters, 1973
- Dislocations and Plastic Flow in the Diamond StructurePublished by Elsevier ,1969