Bi 3.25 La 0.75 Ti 3 O 12 thin films prepared on Si (100) by metalorganic decomposition method
- 19 March 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (12) , 1733-1735
- https://doi.org/10.1063/1.1355012
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Lanthanum-substituted bismuth titanate for use in non-volatile memoriesNature, 1999
- Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin filmsApplied Physics Letters, 1996
- Preparation and Dielectric and Electrooptic Properties of Bi4Ti3O12 Films by Electron Cyclotron Resonance Plasma Sputtering DepositionJapanese Journal of Applied Physics, 1991
- Pulsed laser deposition and ferroelectric characterization of bismuth titanate filmsApplied Physics Letters, 1991
- Epitaxial growth of ferroelectric bismuth titanate thin films by pulsed laser depositionApplied Physics Letters, 1990
- Optical switching characteristics of epitaxial bismuth titanate films for matrix-addressed displaysFerroelectrics, 1976
- Ferroelectric field-effect memory device using Bi4Ti3O12 filmJournal of Applied Physics, 1975
- A new ferroelectric memory device, metal-ferroelectric-semiconductor transistorIEEE Transactions on Electron Devices, 1974
- Electrical and Optical Properties of Ferroelectric Bi4Ti3O12 Single CrystalsJournal of Applied Physics, 1968
- Crystal Chemistry of Mixed Bismuth Oxides with Layer‐Type StructureJournal of the American Ceramic Society, 1962