Infrared optical constants of PtSi
- 1 June 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (11) , 984-986
- https://doi.org/10.1063/1.93823
Abstract
Knowledge of the infrared optical constants of PtSi is required for quantum yield calculations of Schottky barrier IR imagers with PtSi electrodes. We employ Rutherford backscattering spectrometry to identify the PtSi phase and calculate the infrared optical constants from reflectance data by a Kramers–Kronig analysis technique. Several examples of quantum yield calculations for different imager structures using the calculated optical constants are given.Keywords
This publication has 13 references indexed in Scilit:
- Palladium-silicide Schottky-barrier IR-CCD for SWIR applications at intermediate temperaturesIEEE Electron Device Letters, 1982
- Platinum Silicide Schottky-Barrier IR-CCD Image SensorsJapanese Journal of Applied Physics, 1982
- Kinetics and mechanism of platinum silicide formation on siliconApplied Physics Letters, 1974
- Influence of Oxide Layers on the Determination of the Optical Properties of SiliconJournal of Applied Physics, 1972
- Model of Schottky Barrier Hot-Electron-Mode PhotodetectionApplied Optics, 1971
- Simple Model for Internal PhotoemissionJournal of Applied Physics, 1971
- A 1 to 2 µm silicon avalanche photodiodeProceedings of the IEEE, 1970
- Infrared Reflectance and Emittance of Silver and Gold Evaporated in Ultrahigh VacuumApplied Optics, 1965
- Optical Constants of Germanium in the Region 1 to 10 evPhysical Review B, 1959
- Optical Constants by ReflectionProceedings of the Physical Society. Section B, 1952