Laser light spot mapping of depletion in power semiconductor devices
- 16 May 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 53 (1) , 311-320
- https://doi.org/10.1002/pssa.2210530136
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Laser testing of integrated circuitsIEEE Journal of Solid-State Circuits, 1977
- Mapping nonlinearities over the active regions of semiconductor devicesProceedings of the IEEE, 1976
- Thermal mapping of transistors with a laser scannerProceedings of the IEEE, 1976
- Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layersJournal of Applied Physics, 1973
- GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room TemperatureJournal of Applied Physics, 1970
- Zur Messung der Diffusionslänge der Minoritätsträger in HalbleiternPhysica Status Solidi (b), 1964
- Location of p-n and l-h junctions in semiconductorsBritish Journal of Applied Physics, 1960
- XIII. Photovoltaic and Photoconductive Theory Applied to InSbJournal of Electronics and Control, 1955
- Theory and Experiment for a GermaniumJunctionPhysical Review B, 1951
- Measurement of Hole Diffusion in-Type GermaniumPhysical Review B, 1951